Fe掺杂GaN中Fe相关缺陷发光特性研究

利用氢化物气相外延方法制备了 Fe掺杂GaN单晶.材料发光特性随掺杂浓度、温度和激发功率的变化规律表明,位于蓝光波段的发光与掺杂的Fe离子有关.随着Fe掺杂浓度的增加,红外波段发光强度将被抑制,而蓝光波段发光强度显著增加.在较高位错密度样品中,相比于蓝光,红外发光强度显著增加.掺杂样品的光致激发光谱进一步说明了 Fe离子相关的红外和蓝光发光能级跃迁特征及过程.结果表明GaN中的本征缺陷结构以及位错对Fe相关能级跃迁具有重要影响.

The Effect of Different Fe States on Optical Properties in Fe-doped GaN

The thick Fe-doped GaN was prepared by the hydride vapor phase epitaxy method. Through the changes of luminescence properties with doping concentration, temperature and excitation power, the intrinsic correlation between infrared and blue emissions with the doped Fe ions was explored. The infrared luminescence will be suppressed at higher doping concentrations, while the blue emission intensity will increase significantly. Compared with blue light emission, the intensity of infrared emission increases significantly in the samples with higher dislocation density. The photoluminescence excitation spectra show the characteristics and process of the energy level transition of infrared and blue emissions are related with Fe ion. The intrinsic defect and dislocations in GaN have an important influence on the Fe related energy level transitions.