Preparation and Unique Electrical Behaviors of Monodispersed Hybrid Nanorattles of Metal Nanocores with Hairy Electroactive Polymer Shells |
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Authors: | Prof?Dr Yu Chen Cheng Wang Prof?Dr Chun Xiang Zhu Prof?Dr Koon‐Gee Neoh Prof?Dr En‐Tang Kang |
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Institution: | 1. Key Lab for Adv. Mater. Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China);2. The State Key Laboratory of ASIC & System, Fudan University, 220 Handan Road, Shanghai 200433 (China);3. Department of Electrical & Computer Engineering, National University of Singapore, 10 Kent Ridge, 119260 (Singapore);4. Department of Chemical & Biomolecular Engineering, National University of Singapore, 10 Kent Ridge, 119260 (Singapore) |
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Abstract: | A versatile template‐assisted strategy for the preparation of monodispersed rattle‐type hybrid nanospheres, encapsulating a movable Au nanocore in the hollow cavity of a hairy electroactive polymer shell (Au@air@PTEMA‐g‐P3HT hybrid nanorattles; PTEMA: poly(2‐(thiophen‐3‐yl)ethyl methacrylate; P3HT: poly(3‐hexylthiophene), was reported. The Au@silica core‐shell nanoparticles, prepared by the modified Stöber sol–gel process on Au nanoparticle seeds, were used as templates for the synthesis of Au@silica@PTEMA core‐double shell nanospheres. Subsequent oxidative graft polymerization of 3‐hexylthiophene from the exterior surface of the Au@silica@PTEMA core‐double shell nanospheres allowed the tailoring of surface functionality with electroactive P3HT brushes (Au@silica@PTEMA‐g‐P3HT nanospheres). The Au@air@ PTEMA‐g‐P3HT hybrid nanorattles were obtained after etching of the silica interlayer by HF. The as‐prepared nanorattles were dispersed into an electrically insulating polystyrene matrix and for the first time used to fabricate nonvolatile memory devices. As a result, unique electrical behaviors, including insulator behavior, write‐once‐read‐many‐times and rewritable memory effects, and conductor behavior as well, were observed in the Al/Au@air@PTEMA‐g‐P3HT+PS/ITO (ITO: indium‐tin oxide) sandwich thin‐film devices. |
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Keywords: | electrical behaviors hairy hybrid nanorattle memory devices oxidative graft polymerization poly(3‐hexylthiophene) |
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