| 立方半导体中双空位态的电子结构(Ⅲ)——硅中双空位态的波函数 |
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| 引用本文： | 任尚元,茅德强,李名复. 立方半导体中双空位态的电子结构(Ⅲ)——硅中双空位态的波函数[J]. 物理学报, 1986, 35(11): 1457-1464 |
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| 作者姓名： | 任尚元 茅德强 李名复 |
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| 作者单位： | (1)中国科学技术大学物理系; (2)中国科学技术大学研究生院 |
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| 摘 要： | 利用文献[1]中的基本方程和Vogl等人的紧束缚哈密顿量,计算了硅中理想双空位的Eg和Eu态的波函数,讨论了计算结果和ESR与ENDOR谱的比较。关键词：
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| 收稿时间： | 1986-01-06 |
ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅲ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN SI |
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| REN SHANG-YUAN,MAO DE-QIANG and LI MING-FU. ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅲ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN SI[J]. Acta Physica Sinica, 1986, 35(11): 1457-1464 |
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| Authors: | REN SHANG-YUAN MAO DE-QIANG LI MING-FU |
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| Abstract: | The wavefunctions of the Eu, state and the Eg state are evaluated for the ideal divacancy in Si, using the basic equations given in [1] and the tight binding Hamiltonian given by P. Vogl et al. Comparison between the culculated results and the ESR and ENDOR spectra of V2+ and V2- in Si is discussed. |
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