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Influence of Ga+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers |
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| Authors: | Qi Xian-Jin Wang Yin-Gang Miao Xue-Fei Li Zi-Quan Huang Yi-Zhong |
| Affiliation: | College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;Department of Materials, Oxford University, Oxford OX1 3PH, UK;School of Materials Science and Engineering, Nanyang Technological University, Singapore |
| Abstract: | This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermally-oxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ga+ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ga+ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation. |
| Keywords: | thermal relaxation exchange bias ion irradiation energy barrier |
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