Carrier concentration in modulation-doped AlGaAs-GaAs heterostructures |
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Authors: | G Weimann W Schlapp |
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Institution: | (1) Forschungsinstitut der Deutschen Bundespost, P.O. Box 5000, D-6100 Darmstadt, Fed. Rep. Germany |
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Abstract: | Single-interface modulation-doped AlGaAs-GaAs heterostructures have very high mobilities if thick undoped spacers are introduced between the Si donors and the twodimensional electron gas. Electron densities are limited to values below 1012 cm–2. Higher channel densities are desirable for device applications and can be obtained by confining the electrons in quantum wells doped from both sides. Single quantum-well structures have been grown with sheet carrier densities exceeding 3×1012 cm–2 at 300 K and 77 K mobilities of 54,000 cm2/Vs. Single quantum wells doped from one side only with low electron concentrations of 2×1011 cm–2 have 4.2 K mobilities of 200,000cm2/Vs. |
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Keywords: | 68 55+b 72 20Fr 73 40 Lq |
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