An alternative method to fabricate the planar-type resonant-cavity light-emitting diodes by using silicon oxide for short-reach communications |
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Authors: | Chia-Lung Tsai Yi-Lun Chou Ray-Ming Lin Feng-Ming Lee Meng-Chyi Wu Sun-Chien Ko |
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Institution: | aDepartment of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China;bDepartment of Electrical Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan, Republic of China;cTelecommunication Laboratories, Chunghwa Telecom Co., Ltd., 12, Lane 551, Min-Tsu Road, Section 3, Yang-Mei, Tao-Yuan 326, Taiwan, Republic of China |
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Abstract: | In this article, the silicon oxide (SiOx) planarization technique is presented to fabricate the 650-nm resonant-cavity light-emitting diodes (RCLEDs). The performances of RCLEDs are characterized by forward voltage, light output power, external quantum efficiency, emission spectrum, and dynamic response. As a result, the device with the SiOx-planarized layer exhibits a low operating voltage of 2.3 V at 20 mA, a maximum light output power of 304 μW at 15 mA, and the best external quantum efficiency of 3% at 1.2 mA. In addition, the SiOx-planarized device exhibits temperature insensitivity as compared to the device without it. The RCLED with a 30-μm diameter shows the maximum 3 dB frequency bandwidth of 275 MHz at a driving current of 40 mA. Finally, the RCLED with a SiOx-planarized layer shows a clear eye-opening feature as operating at 100 Mbit/s at 20 mA. These results indicate that such LEDs are excellent candidates for use in high-speed short-reach plastic optical fiber communications. |
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Keywords: | Resonant-cavity light-emitting diodes (RCLEDs) SiOx planarization process Short-reach communication |
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