Spin-dependent transport for a two-dimensional electron gas with magnetic barriers

The spin-dependent conductance and magnetoresistance ratio(MRR) for a semiconductor heterostructures consisting of twomagnetic barriers with different height and space have beeninvestigated by the transfer-matrix method. It is shown that thesplitting of the conductance for parallel and antiparallelmagnetization configurations results in tremendous spin-dependentMRR, and the maximal MRRs reach 5300% and 3800% for the magneticbarrier spaces W=81.3 and 243.9~nm, respectively. The obtainedspin-filtering transport property of nanostructures with magneticbarriers may be useful to magnetic-barrier-based spintronics.