| 化合物半导体异质外延层中的缺陷 |
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| 引用本文： | 朱健,施天生. 化合物半导体异质外延层中的缺陷[J]. 分析测试学报, 1990, 0(5) |
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| 作者姓名： | 朱健 施天生 |
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| 作者单位： | 中国科学院上海冶金所(朱健)，中国科学院上海冶金所(施天生) |
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| 摘 要： | 本文报道了用MBE方法在Si(100)上生成GaAs和用MOCVD方法在GaAs(100)上生成CdTe的异质外延层中的某些缺陷。用JEM-4000EX和JEM-200CX电镜观察,电子束沿晶体的[011]方向入射,观察到的晶体缺陷运用高分辨像和选区衍射技术进行研究和分析。结果表明CdTe/GaAs中主要缺陷是失配位错及微孪晶,而在GaAs/Si中还含有反相无序。
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| 关 键 词： | 异质外延层 微孪晶 砷化镓/硅 碲化镉/砷化镓 |
Lattice Defects in the Heteroepitaxial Layer of Compound Semiconductors |
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| Zhu Jian,Shi Tiansheng Shangeai Insitute of Metallurgy,Academia Sinica. Lattice Defects in the Heteroepitaxial Layer of Compound Semiconductors[J]. Journal of Instrumental Analysis, 1990, 0(5) |
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| Authors: | Zhu Jian Shi Tiansheng Shangeai Insitute of Metallurgy Academia Sinica |
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| Abstract: | The lattice defects in the heteroepitaxial layers of GaAs on Si (100) grown by MBE andCdTe on GaAs (100) grown by MOCVD have been examined respectively by EM of using JEM-4000EX and JEM-200CX. Tee electron beam is along its [011] direction of crystal. The latticedefects wrre studied and analysed by high resolution lattice image and SAD pattern. It is shownthat the main defects are mismatch dislocations and microtwin in CaTe/GaAs, but in GaAs/Si theantiphase disorder is also included. |
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| Keywords: | Heteroepitaxial layer microtwin GaAs/Si GaTe/GaAs |
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