| 隧穿展宽对超晶格子带间光吸收饱和的影响 |
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| 引用本文： | 潘少华 冯思民. 隧穿展宽对超晶格子带间光吸收饱和的影响[J]. 物理学报, 1991, 40(7): 1074-1079 |
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| 作者姓名： | 潘少华 冯思民 |
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| 作者单位： | 中国科学院物理研究所, |
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| 摘 要： | 本文运用Kroning-Penney 模型新形式, 研究超晶格子带间光吸收的三阶非线性效应, 发现不论量子阱参数(如阱宽、垒宽和垒高等)如何改变, 光吸收饱和强度与隧穿谱宽之间存在着一种较普遍的关系, 并阐明了这种依从关系的物理机制.关键词：
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| 关 键 词： | 隧穿 超晶格 子带间光吸收 半导体 |
TUNNEL BROADENING EFFECT ON INTERSUBBAN OOPTICAL SATURATION INS UPERLATTICES |
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| Pan Shao-hua Feng Si-min Cui Da-fu Yan Guo-zhen. TUNNEL BROADENING EFFECT ON INTERSUBBAN OOPTICAL SATURATION INS UPERLATTICES[J]. Acta Physica Sinica, 1991, 40(7): 1074-1079 |
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| Authors: | Pan Shao-hua Feng Si-min Cui Da-fu Yan Guo-zhen |
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| Abstract: | By means of a new formalism of the Kronig-Ponney model developed recently, the third order nonlinear optical effect of intersubband transition In superlattices is studied. It is shown that there is a general relation between optical saturation intensity and tunnel bandwidth. The physical mechanism of this relation is analyzed.
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