| 射频反应性溅射沉积的Cd2SnO4薄膜物理性质与缺陷特性研究 |
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| 引用本文： | 彭栋梁,蒋生蕊.射频反应性溅射沉积的Cd2SnO4薄膜物理性质与缺陷特性研究[J].物理学报,1992,41(12):2055-2060. |
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| 作者姓名： | 彭栋梁 蒋生蕊 |
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| 作者单位： | 兰州大学物理系,兰州730000 |
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| 摘 要： | 在Ar+O2混合气氛中射频反应性溅射Cd-Sn合金靶制备了透明导电Cd2SnO4(简称CTO)薄膜。用X射线衍射测量了CTO膜的结构。实验结果表明,这种薄膜的电学和光学性质依赖于混合气体中的氧浓度、衬底温度以及沉积后的热处理。获得的CTO膜最低电阻率为1.74×10-6Ω·cm,可见光光谱区最高透射率为95％。对于氧浓度为6％、衬底温度为400℃时沉积的CTO膜,经热处理后,其光隙能由热处理前的2.37eV增大为2.6
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| 关 键 词： | 硫酸镉 薄膜 缺陷 测射 射频 |
| 收稿时间： | 1992-01-20 |
INVESTIGATION ON THE PHYSICAL PROPERTIES AND DEFECTS OF Cd2SnO4 FILMS DEPOSITED BY RF REACTIVE SPUTTERING |
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| PENG DONG-LIANG and JIANG SHENG-RUI.INVESTIGATION ON THE PHYSICAL PROPERTIES AND DEFECTS OF Cd2SnO4 FILMS DEPOSITED BY RF REACTIVE SPUTTERING[J].Acta Physica Sinica,1992,41(12):2055-2060. |
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| Authors: | PENG DONG-LIANG and JIANG SHENG-RUI |
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| Abstract: | Transparent conductiong films of cadmium-tin oxide were prepared by rf reactive sputtering from a Cd-Sn alloy target in an Ar-O2 atmosphere. The structure of the films was examined by X-ray diffraction. The electrical and optical properties of the films were found to depend on the oxygen concentration in the gas mixture and the substrate temperature as well as the post-deposition heat treatment. The lowest resistivity obtained was 1.74×10-6Ω·cm and the highest optical transmission was 95% over the visible region. For the films deposited at substrate temperature of 400℃ in an Ar-O2 atmosphere of 6% O2, heat treatment increased the optical gap energy from 2.37eV to 2.64eV. |
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