Structural and optical properties of thin films of Cu(In,Ga)Se2 semiconductor compounds |
| |
| Authors: | A. V. Mudryi V. F. Gremenok A. V. Karotki V. B. Zalesski M. V. Yakushev F. Luckert R. Martin |
| |
| Affiliation: | 1.Scientific and Applied Materials Research Center,National Academy of Sciences of Belarus,Minsk,Belarus;2.B. I. Stepanov Institute of Physics,National Academy of Sciences of Belarus,Minsk,Belarus;3.Strathclyde University,Glasgow,UK |
| |
| Abstract: | The chemical composition of Cu(In,Ga)Se2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap Eg for this material in the 1.05–1.72 eV spectral range at 4.2 K. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
