首页 | 本学科首页   官方微博 | 高级检索  
     

水热法制备Ni/ Zr0.4Ce0.6O2-Al2O3催化剂上CH4-CO2重整反应研究: NiO含量的影响
引用本文:李春林,伏义路,卞国柱. 水热法制备Ni/ Zr0.4Ce0.6O2-Al2O3催化剂上CH4-CO2重整反应研究: NiO含量的影响[J]. 燃料化学学报, 2002, 30(5): 468-472
作者姓名:李春林  伏义路  卞国柱
作者单位:中国科学技术大学,化学物理系,安徽,合肥,230026
摘    要:采用水热合成法制备不同NiO含量的Ni/Zr0.4Ce0.6O2-Al2O3催化剂,使用X射线衍射(XPD)和H2的程序升温还原(H2-TPR)对样品进行表征,研究了NiO的含量对催化剂结构和CH4-CO2重整性能的影响。结果表征表明,少量Ni组分能在催化剂表面分散并进入CeO2-ZrO2固熔体晶格间隙而被固熔体包裹,并使固熔体晶粒变小,促进了固熔体的低温还原,而过量的NiO暴露在外生成NiO颗粒。活性测试结果表明,NiO含量少的样品活性随反应进行有较高的增长。选择适当空速,能使CH4-CO2以1:1反应。

关 键 词:水热法 制备 Ni/Zr0.4Ce0.6O2-Al2O3催化剂 氧化铝 掺杂 镍基催化剂 催化重整 铈锆固熔体 甲烷 二氧化碳
文章编号:0253-2409(2002)05-0468-05
修稿时间:2002-02-05

CO2 REFORMING OF CH4 OVER Ni/Zr0.4Ce0.6O2-Al2O3 CATALYSTS PREPARED BY HYDROTHERMAL METHOD: EFFECT OF NiO CONTENT
LI Chun lin,FU Yi lu,BIAN Guo zhu. CO2 REFORMING OF CH4 OVER Ni/Zr0.4Ce0.6O2-Al2O3 CATALYSTS PREPARED BY HYDROTHERMAL METHOD: EFFECT OF NiO CONTENT[J]. Journal of Fuel Chemistry and Technology, 2002, 30(5): 468-472
Authors:LI Chun lin  FU Yi lu  BIAN Guo zhu
Abstract:Ni/Zr 0 4 Ce 0 6 O 2 Al 2O 3 catalyst samples with different amount of NiO were prepared by hydrothermal method and characterized by X ray diffraction and H 2 temperature programmed reduce techniques The influence of addition of NiO on structures of catalysts and activity of CO 2 reforming of methane were studied It is found that a small amount of NiO can disperse on surface and enter the crystal lattice space of solid solution and be enwrapped by CeO 2 ZrO 2 solid solution, consequently restricts the growth of CeO 2 ZrO 2 solid solution grain and promote reducibility of solid solution at low temperature, whereas excess amount of NiO exposes outside and forms crystallites of NiO A obvious increasing of activity over catalyst with lesser amount NiO is found At a certain space velocity the conversion of CH 4 and CO 2 at same molar ratio can been obtained
Keywords:hydrothermal method  CO 2 reforming of CH 4  CeO 2 ZrO 2 solid solution  Ni catalysts  H 2 TPR
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号