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Growth and surface characterization of sputter-deposited molybdenum oxide thin films |
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| Authors: | C.V. Ramana V.V. Atuchin V.A. Kochubey V. Shutthanandan R.C. Ewing |
| Affiliation: | a Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109, USA b Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia c Technical Centre, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia d Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352, USA |
| Abstract: | Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of an argon-oxygen gas mixture under varying conditions of substrate temperature (Ts) and oxygen partial pressure (pO2). The effect of Ts and pO2 on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy-dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of Ts and pO2 on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 °C under 62.3% O2 pressure were stoichiometric and polycrystalline MoO3. Films grown at lower pO2 were non-stoichiometric MoOx films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO3 films. |
| Keywords: | MoO3 thin films Sputter deposition Substrate temperature Oxygen pressure Growth Microstructure |
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