Pulsed laser deposition of doped skutterudite thin films |
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Authors: | D. Colceag A. Dauscher B. Lenoir R. Birjega M. Dinescu |
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Affiliation: | a Laboratoire de Physique des Matériaux, UMR 7556, Ecole Nationale Supérieure des Mines de Nancy, Parc de Saurupt, F-54042 Nancy, France b National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG-16, RO-77125 Magurele, Romania |
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Abstract: | CaxCo4Sb12 skutterudite thin films have been prepared by pulsed laser deposition using a Nd:YAG laser working at 532 or 266 nm of wavelength. Characterization has been carried out by X-ray diffraction, atomic force microscopy and scanning electron microscopy. Emphasis has been put on the difficulty to obtain the skutterudite phase. Influence of the deposition temperature, the way of sticking the substrate, the laser fluence, the base pressure prior to deposition and the laser wavelength has been studied. All parameters revealed to have a drastic effect, and the skutterudite could only be achieved in a very narrow range of temperature and laser fluence, for a given wavelength, showing the importance on how these parameters are measured to ensure reproducible results. |
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Keywords: | Skutterudite thin films Pulsed laser deposition XRD AFM |
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