Synthesis and fine patterning of organic-inorganic composite SiO2-Al2O3 thick films |
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Authors: | Q.L. Liang G.Y. Zhao |
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Affiliation: | a School of Material Science & Engineering, Xi’an University of Technology, Xi’an 710048, China b Quality Engineering Division, Semiconductor Manufacturing International Corp., Shanghai 201203, China c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China |
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Abstract: | Organic-inorganic composite SiO2-Al2O3 films have been prepared by sol-gel using methacryloxypropyl trimethoxysilane and aluminum sec-butoxide as the precursors. By introduction of organic groups into the inorganic backbone, the smooth and crack-free films could be readily achieved by a one-step dip-coating process, with the thickness up to 4.6 μm after being post-baked at 200 °C for 2 h. The films presented in an amorphous phase with an acceptable chemical homogeneity. Owing to the formation of chelate rings, the gel films showed a strong photosensitivity to ultraviolet light at 325 nm. The uniform fine patterns of SiO2-Al2O3 thick films could be well defined by ultraviolet light imprinting simply using a mask. These performances of SiO2-Al2O3 films indicate the potential for integrated optical systems. |
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Keywords: | 61.43.Er 78.66.Sq 81.65.Cf 81.20.Fw |
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