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Synthesis and fine patterning of organic-inorganic composite SiO2-Al2O3 thick films
Authors:QL Liang  GY Zhao
Institution:a School of Material Science & Engineering, Xi’an University of Technology, Xi’an 710048, China
b Quality Engineering Division, Semiconductor Manufacturing International Corp., Shanghai 201203, China
c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
Abstract:Organic-inorganic composite SiO2-Al2O3 films have been prepared by sol-gel using methacryloxypropyl trimethoxysilane and aluminum sec-butoxide as the precursors. By introduction of organic groups into the inorganic backbone, the smooth and crack-free films could be readily achieved by a one-step dip-coating process, with the thickness up to 4.6 μm after being post-baked at 200 °C for 2 h. The films presented in an amorphous phase with an acceptable chemical homogeneity. Owing to the formation of chelate rings, the gel films showed a strong photosensitivity to ultraviolet light at 325 nm. The uniform fine patterns of SiO2-Al2O3 thick films could be well defined by ultraviolet light imprinting simply using a mask. These performances of SiO2-Al2O3 films indicate the potential for integrated optical systems.
Keywords:61  43  Er  78  66  Sq  81  65  Cf  81  20  Fw
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