Rare-earth chloride seeded growth of GaN nano- and micro-crystals |
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Authors: | M.A. Mastro R.T. Holm J. Caldwell O. Glembocki J. Kim |
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Affiliation: | a U.S. Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Ave., SW, Washington, DC 20375, United States b Department of Chemical and Biological Engineering, Korea University, Anam-Dong 5-1, Seungbuk-Gu, Seoul, South Korea |
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Abstract: | A novel rare-earth chloride seed was employed as a catalyst for growth of GaN nano- and micro-crystals on c-, a- and r-plane sapphire. The ErCl3 seed on the substrate surface enhanced the growth rate and density of the GaN crystals. Distinctive green photoluminescence was measured, confirming that Er3+ ions were active in the GaN matrix. This technique can be adapted to selectively grow GaN crystals with emission tailored to the particular optical transitions of the rare-earth seed. |
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Keywords: | 72.80.Ey 78.55.Cr |
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