Characterization of In/Pd and Pd/In/Pd thin films by ellipsometric, XRD and AES methods |
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| Authors: | A.A. Wronkowska A. Wronkowski A. Bukaluk M. Trzciński K. Okulewicz |
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| Affiliation: | Institute of Mathematics and Physics, University of Technology and Agriculture, ul. S. Kaliskiego 7, PL-85 796 Bydgoszcz, Poland |
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| Abstract: | In/Pd and Pd/In/Pd thin films were prepared by thermal evaporation on the SiO2 substrate in a vacuum. The structural and optical properties of the films were investigated by means of X-ray diffractometry (XRD), Auger electron spectroscopy (AES) and spectroscopic ellipsometry (SE). Auger depth profile studies were performed in order to determine the composition of elements in the Pd-In systems. Interdiffusion of metals was detected at room temperature. Optical properties of Pd-In composite layers formed due to the interdiffusion were derived from ellipsometric quantities Ψ and Δ measured in the photon energy range 0.75-6.50 eV at different angles of incidence. The effective optical spectra show absorption peaks dependent on the composition of nonuniform films. The XRD patterns indicated formation of Pd1−xInx intermetallic phases in the samples. |
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| Keywords: | Interdiffusion PdIn compounds X-ray diffractometry Spectroscopic ellipsometry Dielectric function Auger electron spectroscopy |
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