Enhanced luminescence of GdTaO4:Eu thin-film phosphors by K doping |
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Authors: | Xiaolin Liu Lihong Xiao Kun Han Rui Zhang |
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Affiliation: | Laboratory of Waves & Microstructure Materials, Pohl Institute of Solid State Physics, Tongji University, Shanghai 200092, People's Republic of China |
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Abstract: | The effect of K+ ions on GdTaO4:Eu3+ thin-film phosphors was investigated in order to improve their luminescent properties. The GdTaO4:Eu0.1, Kx thin films were synthesized by sol-gel process, and characterized through measuring their microstructure and luminescence. The results indicated that photoluminescence (PL) intensity of GdTaO4:Eu3+ film was improved remarkably by K doping. There were two maxima in the curve of PL intensity against K+ dopant concentration, where one was improved up to 2.1 times at x = 0.001 and the other was enhanced up to 2.7 times at x = 0.05. The first maximum was regarded as the alteration of the local environment surrounding the Eu3+ activator by incorporation of K+ ions, and the second maximum was due to the flux effect. Additionally, the luminescence increased with the increase of firing temperature from 800 °C to 1200 °C. |
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Keywords: | 77.84.Dy 78.20.&minus e 78.55.&minus m 81.20.Fw |
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