Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy |
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Authors: | Fernando Gonzá lez-Posada,Jennifer A. Bardwell,Soufien Haffouz,Alejandro F. Brañ a |
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Affiliation: | a Departamento de Ingeniería Electrónica and ISOM, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain b Institute for Microstructural Sciences, National Research Council, 1200 Montreal Road, Ottawa, Ont. K1A 0R6, Canada |
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Abstract: | The chemical composition of the AlGaN/GaN surface during typical process steps in transistor fabrication was studied using X-ray photoelectron spectroscopy (XPS). The steps studied included organic solvent cleaning, 1:1 HCl:H2O dip, buffered oxide etch dip, oxygen plasma descum and rapid thermal annealing (RTA). The surface composition was calculated after correction for the interference of the Ga Auger lines in the N 1s portion of the spectra. The buffered oxide etched (BOE) surface showed a greater tendency for Al (compared to Ga) to be oxidized in the surface, under a layer of adventitious carbon. Three different treatments were found to yield a combination of low C and O levels in the surface. Both plasma cleaning and RTA were highly effective at reducing the carbon contamination of the surface, but did increase the oxygen levels. The RTA treated surface was found to have low levels of oxygen incorporation to a depth of 2-6 nm. |
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Keywords: | 81.05.Ea (III-V semiconductors) 81.65.&minus b (surface treatments) 81.65.Cf (surface cleaning, etching, patterning) 82.80.Pv (electron spectroscopy: X-ray photoelectron spectroscopy (XPS), auger electron spectroscopy (AES), etc.) 85.30.Tv (field effect devices) |
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