Transparent conducting molybdenum-doped zinc oxide films deposited by RF magnetron sputtering |
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Authors: | Xianwu Xiu Maoshui Lv Lina Ye |
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Affiliation: | a School of Physics and Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, PR China b Department of Space Science and Applied Physics, Shandong University at Weihai, Weihai 264209, PR China |
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Abstract: | A new transparent conducting oxide (TCO) film with low resistivity and high transmittance in the visible range, molybdenum-doped zinc oxide (MZO), was successfully prepared by RF magnetron sputtering method on glass substrates at room temperature. The structural, electrical, and optical properties as a function of film thickness were investigated. All the samples have a preferred orientation with the (0 0 2) planes parallel to the substrates. The resistivity initially decreases and then shows an increase with the increase of the film thickness. When the thickness is 400 nm, the film has its best crystallinity and lowest resistivity 9.2 × 10−4 Ω cm with a Hall mobility of 30 cm2 V−1 s−1 and a carrier concentration of 2.3 × 1020 cm−3. The average transmittance in the visible range exceeds 84% for all thickness films. |
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Keywords: | 68.55.Jk 73.61.Ga 78.30.Fs |
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