Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films |
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Authors: | B Todorovi?-Markovi? I Dragani? N Rom?evi? M Drami?anin |
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Institution: | a “Vin?a” Institute of Nuclear Sciences, P.O.B. 522, 11001 Belgrade, Serbia b Institute of Microelectronic Technologies and Single Crystals, Njegoševa 12, 11000 Belgrade, Serbia c Institute of Physics, P.O.B. 68, 11001 Belgrade, Serbia |
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Abstract: | In this paper, results of structural modification of fullerene thin films by single and multiple charged boron ions (B+, B3+) are presented. The applied ion energies were in the range of 15-45 keV. The characterization of as-deposited and irradiated specimens has been performed by atomic force microscopy, Raman and Fourier transform infrared spectroscopy and UV/vis spectrophotometry. The results of Raman analysis have shown the formation of amorphous layer after irradiation of fullerene thin films. Fourier transform infrared spectroscopy has confirmed the formation of new B-C bonds in irradiated films at higher fluences (2 × 1016 cm−2). The morphology of bombarded films has been changed significantly. The optical band gap was found to be reduced from 1.7 to 1.06 eV for irradiated films by B3+ ions and 0.7 eV for irradiated films by B+ ions. |
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Keywords: | Atomic force microscopy Raman scattering spectroscopy Fourier transform infrared spectroscopy Ion bombardment Boron carbides |
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