Hydrogen induced voids in hydrogenated amorphous silicon carbon (a-SiC:H): Results of effusion and diffusion studies |
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Authors: | Rosari Saleh Lusitra Munisa |
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Institution: | a Jurusan Fisika, Fakultas MIPA, Universitas Indonesia, Depok 16424, Indonesia b Institut für Photovoltaik (IPV), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany |
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Abstract: | The void formation in Si-rich a-SiC:H films deposited with dc magnetron sputtering is studied by effusion measurements of hydrogen and of implanted rare gases and secondary ion mass spectrometry (SIMS). Rare gas atoms were incorporated into the material by ion implantation. The results suggest a widening of the network openings with increasing alloy concentration. However, the void formation is mainly attributed not to an increase in carbon concentration but to an increase in hydrogen incorporation. |
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Keywords: | Amorphous alloys SIMS Implantation |
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