Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains |
| |
Authors: | R Coq Germanicus E Picard |
| |
Institution: | a LAMIP, NXP Semiconductors, BP5120, 14079 Caen, France b Development Process, NXP Semiconductors, BP5120, 14079 Caen, France c GMV, Université de Rennes, 35065 Rennes, France |
| |
Abstract: | In this work, we demonstrate that atomic force microscopy allows topography measurement as well as the local electrical properties of very high-doped polysilicon film prior to any subsequent annealing. AFM and TEM observations showed the columnar microstructure of the polysilicon layer. The electrical effect of this microstructure was characterized using SCM, KFM and C-AFM. Each electric mode gives additional information on the local properties of the polysilicon layer. |
| |
Keywords: | ISD polysilicon LPCVD AFM TEM SCM Surface potential C-AFM |
本文献已被 ScienceDirect 等数据库收录! |
|