Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties |
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Authors: | Jingchang Sun Hongwei Liang Jianze Zhao Ziwen Zhao Guotong Du |
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Affiliation: | a State Key Laboratory for Materials Modification by Laser, Ion, Electron Beams & Department of Physics, Dalian University of Technology, Dalian 116024, PR China b College of Electronic Science and Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023, PR China |
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Abstract: | ZnO films were deposited on c-plane Al2O3 substrates by pulsed laser deposition. The etching treatments for as-grown ZnO films were performed in NH4Cl aqueous solution as a function of NH4Cl concentration and etching time. It was found that NH4Cl solution is an appropriate candidate for ZnO wet etching because of its controllable and moderate etching rate. The influence of etching treatment on the morphology, optical and electrical properties of the ZnO films has been investigated systematically by means of X-ray diffraction, atomic force microscope, photoluminescence and Hall effect. The results indicated that the surface morphology and optical properties of the films were highly influenced by etching treatment. |
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Keywords: | 78.55.Et 81.15.Fg 81.65.Cf |
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