Chemical characterization by XPS of Cu/Ge ohmic contacts to n-GaAs |
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Authors: | MC López C Algora M Gabas |
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Institution: | a Laboratorio de Materiales & Superficie (Unidad asociada al CSIC), Departamento de Física Aplicada, Facultad de Ciencias, Universidad de Málaga, E29071 Málaga, Spain b Instituto de Energía Solar, ETSIT, Universidad Politécnica de Madrid, E28040 Madrid, Spain |
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Abstract: | Chemical composition of Cu/Ge layers deposited on a 1 μm thick n-type GaAs epitaxial layer (doped with Te to a concentration of 5 × 1018 cm−3) and its interface were examined ex situ by XPS combined with Ar+ sputtering. These measurements indicate a diffusion of Cu and Ge from the Cu/Ge layer towards GaAs and, also, an out-diffusion of Ga and As from the GaAs layer to the metallic films. The Auger parameter corrected Auger spectra and XPS spectra show only Cu and Ge metals in the in the Cu/Ge layer and in the interface. |
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Keywords: | 73 61 Ey III-V semiconductors 73 61 At metal and metallic alloys 68 35 Fx diffusion Interface formation |
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