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Insights into sticking of radicals on surfaces for smart plasma nano-processing
Authors:Masaru Hori  Toshio Goto
Institution:a Department of Electrical Engineering and Computer Science, Nagoya University, Japan
b Institute for General Engineering, Chubu University, Kasugai, Japan
Abstract:In reactive plasma processing, species produced in the plasma reach the surface of a substrate and cause etching, deposition and surface modification through surface reactions. These reactions are characterized by the densities and energies of species incident on the surfaces. In order to realize nano-scale plasma processing, important species for plasma processing have been identified and characterized, and their behavior, not only in the gas phase, but also on the surface, have been clarified and controlled. One of the most critical parameters for insights into surface reaction kinetics of radicals is sticking and surface loss probability. On the basis of radical densities measured by various methods, the sticking and surface reaction loss probabilities have been compiled, and they enable the quantitative understanding of the kinetics of radicals on the surface in the plasma. In this article, the sticking and surface reaction loss probabilities measured thus far are reviewed focusing on fluorocarbon gas, silane gas and methane gas based plasma processes. The establishment of a smart plasma process and the development of an autonomous production device with control of radicals on the basis of insights into the surface reactions for nano-scale plasma processing are presented.
Keywords:Radical  Sticking  Loss probability  Plasma processing
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