The possibility of identifying the spatial location of single dislocations by topo-tomography on laboratory setups |
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| Authors: | D A Zolotov A V Buzmakov D A Elfimov V E Asadchikov F N Chukhovskii |
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| Institution: | 1.Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”,Russian Academy of Sciences,Moscow,Russia;2.Moscow State University,Moscow,Russia |
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| Abstract: | The spatial arrangement of single linear defects in a Si single crystal (input surface {111}) has been investigated by X-ray topo-tomography using laboratory X-ray sources. The experimental technique and the procedure of reconstructing a 3D image of dislocation half-loops near the Si crystal surface are described. The sizes of observed linear defects with a spatial resolution of about 10 μm are estimated. |
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