Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411)<Emphasis Type="Italic">A</Emphasis> substrates |
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| Authors: | G B Galiev E A Klimova S S Pushkarev A N Klochkov I N Trunkin A L Vasiliev P P Maltsev |
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| Institution: | 1.Institute of Ultra High Frequency Semiconductor Electronics,Russian Academy of Sciences,Moscow,Russia;2.National Research Centre “Kurchatov Institute,”,Moscow,Russia |
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| Abstract: | The structural and electrical characteristics of In0.53Ga0.47As epitaxial films, grown in the low-temperature mode on InP substrates with (100) and (411)A crystallographic orientations at flow ratios of As4 molecules and In and Ga atoms of γ = 29 and 90, have been comprehensively studied. The use of InP(411)A substrates is shown to increase the probability of forming two-dimensional defects (twins, stacking faults, dislocations, and grain boundaries), thus reducing the mobility of free electrons, and AsGa point defects, which act as donors and increase the free-electron concentration. An increase in γ from 29 to 90 leads to transformation of single-crystal InGaAs films grown on (100) and (411)A substrates into polycrystalline ones. |
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