| 后退火对InxGa1—xAs单层量子点光学性质的影响 |
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| 引用本文： | 赵震.后退火对InxGa1—xAs单层量子点光学性质的影响[J].强激光与粒子束,1999,11(3):289-294. |
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| 作者姓名： | 赵震 |
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| 作者单位： | 俄罗斯科学院Ａ．Ｆ．Ｉｏｆfｅ物理技术研究所 |
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| 摘 要： | 研究了以ＧａＡｓ和Ａｌ０．１５Ｇａ０．８５Ａｓ为基体，当铟的摩尔分数（ｘ）不同时，后退火对ＩｎｘＧａ１－ｘＡｓ单层量子点光致荧光（ＰＬ）谱特性的影响。后退火将导致铟含量不同的样品（ｘ＝０．２３，０．３７，０．５０，１．０）的ＰＬ谱线宽度变窄和蓝移。对于ＧａＡｓ基体，在７００℃退火９０分钟所造成的ＰＬ谱蓝移与退火３０分钟相似；（仅当ｘ＝０．２３时，退火９０分钟所造成的ＰＬ谱蓝移小于３０分钟）。对于Ａｌ０．１５Ｇａ０．８５Ａｓ基体，在７００℃退火３０分钟和９０分钟，其ＰＬ谱蓝移是不同的。
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| 关 键 词： | 量子点 后退火工艺 光致荧光 注入式半导体激光器 |
Effects of Annealing on Properties of InGaAs Quantum Dots |
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| ZHAO ZhenA.F. Ioffe Physical Technical Institute of the Russian Academy of Sciences Politeknicheskaya,St. Petersburg,Russian.Effects of Annealing on Properties of InGaAs Quantum Dots[J].High Power Laser and Particle Beams,1999,11(3):289-294. |
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| Authors: | ZHAO ZhenAF Ioffe Physical Technical Institute of the Russian Academy of Sciences Politeknicheskaya St Petersburg Russian |
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| Institution: | ZHAO ZhenA.F. Ioffe Physical Technical Institute of the Russian Academy of Sciences Politeknicheskaya,26,St. Petersburg,Russian,194021 |
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| Abstract: | Effects of post growth annealing on optical properties of single layer In x Ga 1 x As quantum dots with different indium fraction ( x ), embedded in a GaAs or an Al 0.15 Ga 0.85 As matrix respectively, have been investigated. Annealing leads to narrowing of line width and different blue shifts for different indium fraction. |
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| Keywords: | quantum dots post growth annealing photoluminescence injection semiconductor laser |
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