| 应变Si1-xGex pMOSFET反型沟道空穴低场迁移率模型 |
| |
| 引用本文： | 张雪锋,徐静平,邹晓,张兰君.应变Si1-xGex pMOSFET反型沟道空穴低场迁移率模型[J].半导体学报,2006,27(11):2000-2004. |
| |
| 作者姓名： | 张雪锋 徐静平 邹晓 张兰君 |
| |
| 作者单位： | 华中科技大学电子科学与技术系,武汉430074 |
| |
| 摘 要： | 在考虑应变对SiGe合金能带结构参数影响的基础上,提出了一个半经验的应变Sil-xGex/Si pMOSFET反型沟道空穴迁移率模型.在该模型中,给出了迁移率随应变的变化,并且考虑了界面陷阱电荷对载流子的库仑散射作用.利用该模型对室温下空穴迁移率随应变的变化及影响空穴迁移率的因素进行了分析讨论.
|
| 关 键 词： | p-MOSFET 应变 Si1-x Gex 空穴迁移率 应变 pMOSFET 沟道 低场 迁移率模型 Strained Mobility Model 分析 因素 变化及影响 空穴迁移率 室温 利用 作用 库仑散射 载流子 界面陷阱电荷 半经验 参数影响 能带结构 |
| 文章编号： | 0253-4177(2006)11-2000-05 |
| 修稿时间： | 2006年5月11日 |
A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET |
| |
| Zhang Xuefeng,Xu Jingping,Zou Xiao and Zhang Lanjun.A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET[J].Chinese Journal of Semiconductors,2006,27(11):2000-2004. |
| |
| Authors: | Zhang Xuefeng Xu Jingping Zou Xiao and Zhang Lanjun |
| |
| Institution: | Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China;Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China;Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China;Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China |
| |
| Abstract: | A semi-experienced low-field hole mobility model of a strained Si1-xGex/Si pMOSFET is proposed by considering the effect of the strain on the energy-band structure of SiGe alloy.This model includes the variation of mobility with strain (Ge content) and the coulomb-scattering mechanism of interface-trapped charges on inversion carriers.Using the model,the change of the hole mobility with strain (Ge content) is simulated at room temperature,and the influence of some factors on mobility is discussed. |
| |
| Keywords: | p-MOSFET strained Si1-xGex hole mobility |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
| 点击此处可从《半导体学报》下载免费的PDF全文 |
|
