Optical and thermal properties of doped semiconductor |
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Authors: | S Abroug F Saadallah N Yacoubi |
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Institution: | (1) Laboratory of Photothermie, Mécanique des structures et composants électroniques, IPEIN – Merazka, 8000 Nabeul, Tunisia |
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Abstract: | The knowledge of doping effects on optical and thermal
properties of semiconductors is crucial for the development of
optoelectronic compounds. The purpose of this work is to investigate theses
effects by mirage effect technique and spectroscopic ellipsometry SE. The absorption spectra measured for differently doped
Si and GaAs bulk
samples, show that absorption in the near IR increases with dopant density
and also the band gap shifts toward low energies. This behavior is due to
free carrier absorption which could be obtained by subtracting phonon
assisted absorption from the measured spectrum. This carrier absorption is
related to the dopant density throw a semi-empirical model. |
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Keywords: | |
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