| Abstract: | Measurements of the photoelectrical and semiconducting parameter degradation of “visible” detectors (Si) under an in-band, pulsed laser irradiation have been performed (Ph.D Thesis, Haute-Alsace University, France, 1998). An Nd:YAG laser, frequency doubled (λ=532 nm) with a pulse duration of 4 ns, has been used to irradiate the Si sensor. It has been shown that a laser irradiation induces a degradation of the detector performances due specially to the large increase in defect concentration, as measured by deep level transient spectroscopy. In order to reduce this defect density and, therefore, to improve the photoelectric properties of the irradiated detectors, a new process has been created in order to protect and to harden the Si sensors against a laser irradiation. This protection is achieved by introducing copper (Cu) atoms in the Si lattice. This process has been patented (number 98 11638). |
