Simulations of germanium epitaxial growth on the silicon (1 0 0) surface incorporating intermixing |
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Authors: | R Akis DK Ferry |
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Institution: | Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706, USA |
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Abstract: | We present kinetic lattice Monte Carlo simulations of Ge deposition onto a reconstructed Si (1 0 0) surface. We account for the exchange of Ge with Si atoms in the substrate, considering two different exchange mechanisms: a dimer exchange mechanism whereby Ge–Ge dimers on the surface become intermixed with substrate Si atoms, and the exchange of Ge atoms below the surface to relieve misfit strain. We examine how Si–Ge exchange affects the interface between the materials when the growth simulations are done at different temperatures. |
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Keywords: | Kinetic lattice Monte Carlo Silicon Germanium Strain Surface diffusion |
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