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Implanted-fluorine depth profiles in silver gallium diselenide |
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| Authors: | |
| Institution: | (1) Department of Physics, Shandong University, Jinan, 250100 Shandong, P.R. China;(2) School of Chemistry, Shandong University, Jinan, 250100 Shandong, P.R. China;(3) Department of Optoelectronics, Shandong University, Jinan, 250100 Shandong, P.R. China;(4) Department of Electronics Engineering, Shandong University, Jinan, 250100 Shandong, P.R. China |
| Abstract: | Range distributions for fluorine ions in 19F+-implanted silver gallium diselenide (AgGaSe2) in an energy range of 80–350 keV were measured by using the 19F(p,   )16O resonant nuclear reaction at ER=872.1 keV with width  =4.2 keV. A proper convolution calculation method was used to extract the true distributions of fluorine from the experimental excitation-yield curves. The experimental range-distribution parameters, Rp and  Rp, were compared with those obtained from Monte Carlo simulation codes. PACS 79.20.Rf; 66.30.Jt; 61.72.Ww |
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