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Epitaxial growth of ZnO films |
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| Authors: | R Triboulet Jacques Perrire |
| Institution: | aCNRS, Laboratoire de Physique des Solides et de Cristallogenèse, 1 Place Aristide Briand, F 92195 Meudon Cedex, France bGroupe de Physique des Solides, Université Paris VI, Campus Boucicaut, 140 rue de Lourmel, 75015 Paris, France |
| Abstract: | After summing up the main physical properties of ZnO and its subsequent applications the aim of this article is to review the growth of ZnO epitaxial films by PLD, MBE, MOCVD and sputtering under their various aspects, substrates, precursors, reaction chemistry, assessment of the layers etc. …, keeping constantly in mind some key issues for the device applications of ZnO in optoelectronics, surface acoustic filters and spintronics, amongst which the growth of high quality epitaxial layers of both n- or p-type conductivity, the possibility of dissolving transition elements in the layers, the growth of ZnO related alloys and heterostructures are of major significance. |
| Keywords: | A3 molecular beam epitaxy A3 physical vapor deposition processes A3 metalorganic chemical vapor deposition A3 laser epitaxy B2 ZnO B2 semiconducting II–VI materials |
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