一种隐埋缓冲掺杂层高压SBD器件新结构

提出了一种新型隐埋缓冲掺杂层(IBBD)高压SBD器件,对其工作特性进行了理论分析和模拟仿真验证。与常规高压SBD相比,该IBBD-SBD在衬底上方引入隐埋缓冲掺杂层,将反向击穿点从常规结构的PN结保护环区域转移到肖特基势垒区域,提升了反向静电释放(ESD)能力和抗反向浪涌能力,提高了器件的可靠性。与现有表面缓冲掺杂层(ISBD)高压SBD相比,该IBBD-SBD重新优化了漂移区的纵向电场分布形状,在保持反向击穿点发生在肖特基势垒区域的前提下,进一步降低反向漏电流、减小正向导通压降,从而降低了器件功耗。仿真结果表明,新器件的击穿电压为118 V。反向偏置电压为60 V时,与ISBD-SBD相比,该IBBD-SBD的漏电流降低了52.2%,正向导通电压更低。

A New High Voltage SBD with Improved Buried Buffer Doped Structure

A novel buried buffer doped layer (IBBD) high voltage SBD was presented, and its operating characteristics were analyzed theoretically and verified by simulation. Compared with the conventional high-voltage SBD, the IBBD-SBD introduced a buried buffer doping layer above the substrate to transfer the reverse breakdown point from the PN junction protection ring area of the conventional structure to the Schottky barrier area, which improved the reverse electrostatic discharge (ESD) ability and anti-reverse surge ability, and improved the reliability of the device. Compared with the existing surface buffer doped layer (ISBD) high-voltage SBD, IBBD-SBD reoptimized the longitudinal electric field distribution in the drift zone, and further reduced the reverse leakage current and the forward guide pass pressure drop while keeping the reverse breakdown point occurring in the Schottky barrier area, thus reduced the device power consumption. Simulation results showed that the breakdown voltage of the new device was 118 V. When the reverse bias voltage was 60 V, compared with ISBD-SBD, the leakage current of the IBBD-SBD was reduced by 52.2%, and the forward voltage drop was lower.