| 高温及关态应力条件下GaAs pHEMT器件的性能退化研究 |
| |
| 引用本文： | 化宁,王佳,王茂森,杜祥裕,戴杰. 高温及关态应力条件下GaAs pHEMT器件的性能退化研究[J]. 微电子学, 2020, 50(6): 932-936 |
| |
| 作者姓名： | 化宁 王佳 王茂森 杜祥裕 戴杰 |
| |
| 作者单位： | 上海航天电子技术研究所, 上海 201109;上海航天技术研究院, 上海 201109 |
| |
| 摘 要： | 研究了高温和电学应力下砷化镓赝晶高电子迁移率晶体管的直流特性退化机理。高温下陷阱辅助发射电流引起器件关态漏电上升,而载流子迁移率的退化引起跨导降低；当温度达到450 K时,栅金属的沉降效应会导致跨导异常升高。进一步研究了不同温度下关态电学应力对器件性能退化的影响,结果与高温下栅沉降效应相吻合。
|
| 关 键 词： | 砷化镓 赝晶高电子迁移率晶体管 高温退化 |
| 收稿时间： | 2020-05-10 |
Study on Performance Degradation of GaAs pHEMT UnderHigh Temperature and Off-State Stress |
| |
| HUA Ning,WANG Ji,WANG Maosen,DU Xiangyu,DAI Jie. Study on Performance Degradation of GaAs pHEMT UnderHigh Temperature and Off-State Stress[J]. Microelectronics, 2020, 50(6): 932-936 |
| |
| Authors: | HUA Ning WANG Ji WANG Maosen DU Xiangyu DAI Jie |
| |
| Affiliation: | Shanghai Institute of Aerospace Electronics Technology, Shanghai 201109, P.R.China;Shanghai Academy of Spaceflight Technology, Shanghai 201109, P.R.China |
| |
| Abstract: | The DC characteristics degradation of GaAs pseudomorphic high electron mobility transistors (pHEMT) under high temperature and off-state stress measurement was studied. Poole-Frenkel (PF) emission mechanism dominated the off-state current, causing an increase in leakage current with the increase in temperature, while the decrease in transconductance was induced by a degradation of carrier mobility. It was observed that the peak transconductance of GaAs pHEMT exhibited an abnormal increase at 450 K, which was attributed to the sink effect of gate metal. Off-state stress influence on device was further investigated, resulting in similar gate sink induced degradation to that observed under high temperature. |
| |
| Keywords: | GaAs pHEMT high temperature degeneration |
|
| 点击此处可从《微电子学》浏览原始摘要信息 |
|
点击此处可从《微电子学》下载免费的PDF全文 |
|
