Chemical vapour deposition of germanium-containing films by IR laser-induced decomposition of ethoxy(trimethyl)germane

Carbon Dioxide (CO₂) laser-induced decomposition of ethoxy(trimethyl)germane (ETG) results in a substantial stripping of organic substituents from germanium and leads to deposition of organogermanium films, the composition of which is dependent on the mode of laser irradiation. Direct absorption of laser radiation in ETG affords material rich in Germanium, while a sulfur hexafluoride (SF₆)-photosensitized process produces a deposit composed of Germanium, Carbon, Hydrogen and Oxygen. The deposited materials can be modified by chemical reactions with acetic anhydride and atmospheric moisture.