Formation of Cu nanoparticles in GaAs using MeV ion implantation followed by thermal annealing |
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Authors: | G Kuri |
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Institution: | (1) Korea Research Institute of Standards and Science, Yusong, Taejon 305-600, South Korea, KR |
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Abstract: | Analytical electron microscopy, high-resolution X-ray diffraction and combined Rutherford backscattering spectrometry and
channeling experiments have been used to investigate the radiation damage and the effect of post-implantation annealing on
the microstructure of GaAs(100) single crystals implanted with 1.00 MeV Cu+ ions to a dose of ≈ 3×1016 cm-2 at room temperature. The experiments reveal the formation of a thick and continuous amorphous layer in the as-implanted state.
Annealing up to 600 °C for 60 min does not result in the complete recovery of the lattice order. The residual disorder in
GaAs has been found to be mostly microtwins and stacking fault bundles. The redistribution of implanted atoms during annealing
results in the formation of nano-sized Cu particles in the GaAs matrix. The X-ray diffraction result shows a cube-on-cube
orientation of the Cu particles with the GaAs lattice. The depth distribution and size of the Cu particles have been determined
from the experimental data. A tentative explanation for these results is presented.
Received: 15 February 1999 / Accepted: 18 February 1999 / Published online: 28 April 1999 |
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Keywords: | PACS: 61 80 Jh 61 18 Bn 61 16 Bg |
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