Analytical study of non-linear transport across a semiconductor-metal junction |
| |
Authors: | N MR Peres |
| |
Institution: | 1. Department of Physics and Center of Physics, University of Minho, 4710-057, Braga, Portugal
|
| |
Abstract: | In this paper we study analytically a one-dimensional model for a semiconductor-metal junction. We study the formation of Tamm states and how they evolve when the semi-infinite semiconductor and metal are coupled together. The non-linear current, as a function of the bias voltage, is studied using the non-equilibrium Green’s function method and the density matrix of the interface is given. The electronic occupation of the sites defining the interface has strong non-linearities as a function of the bias voltage due to strong resonances present in the Green’s functions of the junction sites. The surface Green’s function is computed analytically by solving a quadratic matrix equation, which does not require adding a small imaginary constant to the energy. The wave function for the surface states is given. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|