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Electroreflectance and photoluminescence measurement of passivation by hydrogenation in GaAs/AlGaAs structures |
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| Authors: | D. Yang J. W. Garland P. M. Raccah C. Coluzza P. Frankl M. Capizzi F. Chambers G. Devane |
| Affiliation: | a Department of Physics, University of Illinois at Chicago, Box 4348, Chicago, IL 60680, USA b Department of Physics, Università “La Sapienza”, Piazzale Aldo Moro, 2, 00185, Rome, Italy c Amoco Research Center, Amoco Corporation, Box 400, Naperville, IL 60566, USA |
| Abstract: | We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AlGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and of deep traps in the cap and found the approximate pinning levels and interace charges of the RTS. |
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