| AlGaAs/GaAs多量子阱结构中受激载流子的飞秒弛豫特性 |
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| 引用本文： | 林位株,丘志仁,徐文成.AlGaAs/GaAs多量子阱结构中受激载流子的飞秒弛豫特性[J].光学学报,1992,12(5):390-395. |
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| 作者姓名： | 林位株 丘志仁 徐文成 |
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| 作者单位： | 中山大学激光与光谱学研究所 广州510275
(林位株，丘志仁)，中山大学激光与光谱学研究所 广州510275(徐文成) |
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| 基金项目： | 国家自然科学基金会的资助 |
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| 摘 要： | 本文介绍采用飞秒饱和吸收测量技术研究Al_xGa_(1-x)As/GaAs多量子阱结构中受激载流子的超快弛豫特性.当激发光子能量大于样品势垒层能带隙时,受激产生于势垒层和势阱层连续态中的载流子分别在130和30fs时间内离开受激态,弛豫至准平衡态.势垒中的载流子被捕至势阱束缚态的情况主要发生于热载流子的冷却和复合过程的皮秒级时间内.
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| 关 键 词： | 飞沙脉冲 多量子阱 |
| 收稿时间： | 1990/12/13 |
Femtosecond relaxation of excited carriers in AlGaAs/GaAs multiple quantum wells |
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| LIN WEIZHU,Qiu ZHJREN AND XU WENCHENG.Femtosecond relaxation of excited carriers in AlGaAs/GaAs multiple quantum wells[J].Acta Optica Sinica,1992,12(5):390-395. |
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| Authors: | LIN WEIZHU Qiu ZHJREN AND XU WENCHENG |
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| Abstract: | Ultrafast carrier relaxation in AlαGa1-αAs/GaAs multiple quantum wells is studied using femtosecond absorption saturation measurements with an excited photon energy higher than that of the band gap of the barrier layers. Carriers generated in the well layers and in the barrier layers scatter out of the excited states to a quasi-equilibrium state in 30 and 130 fs, respectively. Carrier capturing from the barriers to the wells occurs mainly during the carrier cooling and recombination in the time scale of picoseconds. |
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| Keywords: | femtosecond pulses multiple quantum wells (MQW) |
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