Q-switched and mode-locked diode-pumped Nd:YAG laser with an LT-GaAs |
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| Authors: | Jie Liu Liyan Gao Wenmiao Tian Xiaoyu Ma |
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| Institution: | a College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
b Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40 kHz as the pump power increased from 2.2 to 6.9 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714 MHz. A maximum average output power of 770 mW was obtained. |
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| Keywords: | 42 55Xi 42 55Rz 42 60Fc 42 60Gd |
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