Gain-clamped dual-stage L-band EDFA by using backward C-band ASE

A dual-stage L-band gain-clamped erbium-doped fiber amplifier (GC-EDFA) by using backward C-band amplified spontaneous emission (ASE) is proposed. Compared with other similar GC-EDFAs, the proposed structure has higher and flatter clamped gain in L-band because of its optimal pump power and EDF length. The flatness from 1570 nm to 1600 nm arrives 0.77 dB, the bandwidth of 3 dB is more than 35 nm and the maximal input signal power arrives −15 dBm.