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Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser |
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| Authors: | Sebastien Forget,Frederic Druon,Patrick Georges,Jean-Philippe Fè ve,Zhiming Weng |
| Affiliation: | a Laboratoire Charles Fabry de l’Institut d’Optique, UMR 8501 du CNRS, Université Paris-Sud, 91403 Orsay, France b JDS Uniphase, 31 Chemin du vieux chêne, 38941 Meylan, France c Fujian JDSU CASIX, Inc. Fuzhou P.O. Box 1103, Fuzhou Fujian 350014, China |
| Abstract: | The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns. |
| Keywords: | 42.55.Xi 42.60.Gd |
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