Efficient photoluminescence from triangular quantum wells at the interface of an InP/In0.53Ga0.47As heterostructure

Efficient photoluminescence (PL) with quantum yield close to 1 from InP/In_0.53Ga_0.47As heterostructures (HSs) at temperatures 77–300 K and low excitation levels is observed and investigated. The PL is due to a quasi-triangular quantum well (TQW) located at the HS interface and consists of two spectrally similar lines: InGaAs interband emission and emission from the bottom level of the TQW. It is found that as the temperature increases, the intersubband emission rises, while the TQW radiation is quenched. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 10, 783–787 (25 May 1998)