| 高密度激发下CdS单晶的自由激子发光 |
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| 引用本文： | 吕有明 范希武. 高密度激发下CdS单晶的自由激子发光[J]. 发光学报, 1990, 11(4): 255-263 |
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| 作者姓名： | 吕有明 范希武 |
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| 作者单位： | 中国科学院长春物理研究所 |
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| 基金项目： | 国家自然科学基金资助课题 |
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| 摘 要： | 本文首次在77K温度的电致发光光谱上,观测到了自由激子和自由激子(Ex-Ex)散射的发射带P。根据半经典理论,得到CdS单晶在高激发密度下的激子有效温度高于晶格温度。并且在77K温度下,通过氮分子激光器3371Å谱线的激发,观察到了Ex-Ex散射的P带的受激发射现象。
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| 关 键 词： | Cds 单晶 高密度 激发 激子 发光 |
| 收稿时间： | 1990-03-15 |
FREE EXCITON EMISSION IN CdS CRYSTALS UNDER HIGH EXCITATION DENSITY |
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| L,#,Youming,Fan Xiwu. FREE EXCITON EMISSION IN CdS CRYSTALS UNDER HIGH EXCITATION DENSITY[J]. Chinese Journal of Luminescence, 1990, 11(4): 255-263 |
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| Authors: | L&# Youming Fan Xiwu |
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| Affiliation: | Changchun Institute of Physics, Academia Sinica |
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| Abstract: | Some papers have been published on luminescence of free exciton under high density excitation in CdS. But most of the research about exciton-exciton interaction are concentrated on photoluminescence below 77K. So far no report is found on free exciton emission in forward biased CdS MIS diodes with high pulse current density.Undoped CdS crystals were grown by sublimation in our labora tory.Dice with dimensions of 5×2×1mm3 were annealed in molten cadmium at 650℃ to reduce their resistivity to the range of 0.1-5Ω·cm. The MIS structure was prepared by making an ohmic contact on the substrate and evaporating an insulating layer and Au contact on the opposite surface. PL and EL were excited by 3371Å line of a pulsed nitrogen laser or by the pulse with high current density. |
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