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Structural transformation of As-stabilized surfaces caused by Ga-deposition detected by time-resolved surface photo-absorption
Authors:K Uwai and N Kobayashi
Institution:

a NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya Atsugi-shi, Kanagawa 243-01 Japan

Abstract:Evolution of surface structures during conversion from various As-stabilized surfaces to Ga-stabilized ones is observed by surface photo-absorption. Desorption of As dimers parallel to 110] is observed during the structural change of c(4×4) and (2×4)γ. The evolution of Ga- and As-related peaks is isolated in surface dielectric anisotropy spectra, which are determined using p- and s-polarized surface photo-absorption spectra during the conversion of (2×4)β to a Ga-stabilized (4×2) surface.
Keywords:
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