| Abstract: | The concentrational dependences of the Hall coefficient and of the resistivity were used to investigate the interaction of
diffusively introduced copper impurity with an ensemble of intrinsic defects inn-CdSnAs
2. The initial electron density and the concentrations of theV
As
andCu
As
defects were found to be of the same order. A study was made of the dependence of the electrophysical properties ofCdSnAs
2
(Cu) on the population of the impurity band and it was shown that the features of the kinetic characteristics ofCdSnAs
2
(Cu) are determined by the absence of an energy gap between the bands with a conductivity of opposite sign and by the fact that
one of the bands is an impurity band.
State Pedagogical University, Nizhegorod. Kh. I. Amirkhanov Physics Institute, Dagestan Scientific Center, Russian Academy
of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 62–66, May, 1997. |
